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O: Fachverband Oberflächenphysik

O 34: Metal Substrates: Structure, Epitaxy and Growth

O 34.5: Poster

Tuesday, March 17, 2015, 18:15–21:00, Poster A

Study of atomic layer deposition with scanning tunneling microscopy — •Zied Rouissi, Massimo Tallarida, and Dieter Schmeisser — Department of Applied Physics and Sensors,Brandenburg University of Technology, 03046 Cottbus, Germany

We present a work concerning the study of the initial steps of atomic layer deposition (ALD) with scanning tunneling microscopy (STM). We focus on the role of the substrates which has been often neglected.However, the detailed knowledge of precursor-substrate reactions is important for the understanding of how ALD proceeds. We report on the reaction of the Al-precursor, trimethyl-Al (TMA), on nanostructured surfaces such as Ag nanoclusters and nanostripes prepared by thermal evaporation on HOPG. We characterized the surface before and after one TMA adsorption pulse at room temperature, observing that the morphology of step edges changes after TMA creating a new terraces with a width of 7-10 nm, translated in the direction of the TMA deposition. This shows that, in case of a regular stepped surface, the substrate morphology would keep the same regularity with the translation in a direction privileged by the precursor absorption.