Regensburg 2016 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 53: Postersession DS/HL

DS 53.13: Poster

Donnerstag, 10. März 2016, 16:00–19:00, Poster A

Hydrogenation of Epitaxial Silicene Studied by in situ Raman Spectroscopy — •Dmytro Solonenko¹, Patrick Vogt², Ovidiu D. Gordan¹, and Dietrich R.T. Zahn¹ — ¹Semiconductor Physics, Technische Universität Chemnitz, D-09107 Chemnitz, Germany — ²Institut für Festkörperphysik, Technische Universität Berlin, D-10623 Berlin, Germany

As silicene can be only grown epitaxially on a substrate like Ag(111) single crystals, the influence of the substrate on the 2D silicene properties have been extensively discussed in literature. It was shown that the electronic properties of epitaxial silicene are altered due to the significant interaction with the substrate but it still keeps a clear semimetallic character[1], as expected for ideal freestanding silicene. On the other hand, an electronic bandgap could be opened by applying an electric field perpendicular to the sheet, or via functionalization, e.g. by H-adsorption. In the latter case, controlled hydrogenation of freestanding silicene might open a bandgap up to the UV edge of the visible spectral region[2]. In order to examine if the silicene structure is preserved upon hydrogenation, we grew silicene monolayer sheets on Ag(111) substrate and hydrogenated them by supplying activated atomic H. In situ Raman spectroscopy study was carried out in order to follow structural changes of the silicene layer upon H-adsorption. We find that the silicene hydrogenation is reversible by heating the sample, at temperatures expected to be sufficient for breaking the H-Si bonds. [1] Johnson, N. W. et al., Adv. Func. Mat. 24, 5253-5259 (2014). [2] Osborn, T. H. et al., Chem. Phys. Lett. 511, 101 (2011).