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Dresden 2017 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 18: Semiconductor Substrates: Structure, Epitaxy and Growth

Montag, 20. März 2017, 16:00–17:30, WIL C307

16:00 O 18.1 Deconstructing silicon: can surface reconstructions emerge from global geometry screening? — •Chiara Panosetti, Maximilian Bauer, Matt Probert, and Karsten Reuter
16:15 O 18.2 Patterning of ultra sharp dopant profiles in siliconSimon Cooil, Federico Mazzola, Hagen Klemm, Gina Peschel, Yuran Niu, Alex Zhakarov, Andrew Evans, Thomas Schmidt, Michelle Simmons, •Jill Miwa, and Justin Wells
16:30 O 18.3 Surface Structure of MOVPE-prepared GaP(111)B — •Peter Kleinschmidt, Pingo Mutombo, Oleksandr Romanyuk, Marcel Himmerlich, Theresa Berthold, Xin Wen, Andreas Nägelein, Matthias Steidl, Agnieszka Paszuk, Oliver Supplie, Stefan Krischok, and Thomas Hannappel
16:45 O 18.4 In situ surface control of AlP on GaP(100) substrate during processing in MOCVD ambient — •Manali Nandy, Agnieszka Paszuk, Anja Dobrich, Oliver Supplie, Peter Kleinschmidt, and Thomas Hannappel
17:00 O 18.5 The structure of single-crystalline ZnO surfaces — •Jens Niederhausen, Antoni Franco-Cañellas, Simon Erker, Martin Oehzelt, Thorsten Schultz, Patrick Amsalem, Pardeep K. Thakur, Katharina Broch, David Duncan, Anton Zykov, Stefan Kowarik, Tien-Lin Lee, Alexander Gerlach, Oliver T. Hofmann, Frank Schreiber, and Norbert Koch
17:15 O 18.6 Atomic scale STM and nc-AFM study of the Hematite (012) surface — •Zdenek Jakub, Florian Kraushofer, Magdalena Bichler, Jan Hulva, Martin Setvin, Michael Schmid, Ulrike Diebold, Peter Blaha, and Gareth. S. Parkinson
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