Münster 1997 – scientific programme
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DY: Dynamik und Statistische Physik
DY 11: Poster I
DY 11.39: Poster
Tuesday, March 18, 1997, 14:30–17:30, F
Simplified 2-D Model of current filamentation in low temperature breakdown regime — •V. Novák1, J. Hirschinger2, W. Eberle2, C. Wimmer2, and W. Prettl2 — 1Ústav pro elektrotechniku AV ČR, Dolejškova 5, 182 02 Praha, Czech Republic — 2Institut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040 Regensburg
The two-dimensional model of a contacted semiconductor layer has been constructed based on a bistable dependence of the local conductivity on the electric field strength. The transition between the high and the low conductive states is treated as a black-box phenomenon, which occurs always at a constant critical value of the field strength. The solution to the resulting free boundary problem reproduces the observable characteristics of current filaments, as can be found e.g. in a dipolar contact geometry in epitaxial layers of n-GaAs. In adition, the influence of the normal magnetic field has been investigated, as well as the interaction between the filament and a material inhomogeneity.