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Verhandlungen
DPG

Regensburg 1998 – scientific programme

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TT: Tiefe Temperaturen

TT 21: Postersitzung III: Spin-Peierls-Systeme, Metall-Isolator-Übergang, Lokalisierung; SL: Theorie; Quantenflüssigkeiten und -kristalle; Amorphe Materialien, Tunnelsysteme; Borcarbide, Fullerene, konventionelle SL; SL dünner Filme; Experimentiertechniken

TT 21.50: Poster

Thursday, March 26, 1998, 15:00–18:30, D

4He-Crystals at mK-Temperatures — •E. Nazaretski3, J. Ruuti1, P. Hakonen1, A. Babkin1, A. Parshin2, and G. Tvalashvili31Low Temperature Laboratory, Helsinki University of Technology, 02150 Espoo, Finland. — 2P.Kapiza Institute for Physical Problems, ul.Kosygina 2, 117334, Moscow, Russia — 3Physikalisches Institut, Universität Bayreuth, D–95440 Bayreuth


Liquid-solid interface of 4He has been investigated down to mK-tempe
ratures using an optical interferometer based on a cooled CCD-sensor in combination with a sensitive pressure gauge. The c-facets with 5-50 screw dislocations/cm2 grew with spiral growth which could be understood by describing the growth in terms of localized steps, within the framework of standard theory. Crystals without screw dislocations showed a new growth mechanism. At rates below 0.5 nm/s the c-facet shows slow, continious growth. Addition of 3He impurities reduced the speed of all growth modes. The reduction of a growth speed is not directly proportional to the concentration of 3He impurities.

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