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AM: Magnetismus

AM 10: Postersitzung

AM 10.64: Poster

Tuesday, March 23, 1999, 16:15–20:00, F\"urstenberghaus

Electronic and magnetic structure of thin Ho films on W(110) — •C. Schüßler-Langeheine¹, Chandan Mazumdar¹, R. Meier¹, A. Grigoriev¹, C. Sutter², D. Abernathy², G. Grübel², G. Kaindl¹, and E. Weschke¹ — ¹Institut für Experimentalphysik, Freie Universität Berlin, Arnimallee 14, D-14195 Berlin-Dahlem, Germany — ²European Synchrotron Radiation Facility, BP. 220, 38043 Grenoble Cédex, France

The exchange splitting of valence states in lanthanide metals and the relation to their degree of localization is still a matter of controversy. In this context, the electronic structure of the helical antiferromagnet Ho has been studied with photoemission spectroscopy. These studies are usually performed on thin films of less than 100 monolayer (ML) thickness, because these samples provide the highest surface quality. Although lanthanide films of this thickness exhibit bulk-like properties in some respect, the magnetic structure might be modified by substrate induced strain. A study using magnetic x-ray diffraction from in-situ grown Ho films on W(110) establishes that the helical magnetic structure exists down to at least 33 ML thickness. A combined study of temperature-dependent angle-resolved photoemission and magnetic x-ray scattering provides information on 4f-5d exchange (RKKY) and the degree of localization of the valence states.