Regensburg 2000 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 12: Poster I: Quanten Hall Effekt (1-9), II-VI Halbleiter (10-17), Epitaxie (18-23), Quantenpunkte und -dr
ähte (24-50), Photonik (51-59), Metall-Isolator Übergang (60-64), Si/Ge (65-67), Elektronentheorie (68-69), Amorphe Halbleiter, Ionen-Implantation
HL 12.48: Poster
Montag, 27. März 2000, 14:00–19:00, A
Optical properties of self-organized InAs/InP quantum wires — •B. Alén1, C. Rudamas1, J. Martinez-Pastor1, A. Garcia-Cristóbal1, L. González2, and J.M. Garcia2 — 1Instituto de Ciencia de Materiales y Departamento de Física Aplicada, Universidad de Valencia, P.O. Box 2085, 46071 Valencia, Spain — 2Instituto de Microelectrónica de Madrid, CNM-CSIC, PTM, 28760 Tres Cantos, Madrid, Spain
Elastic strain relaxation of InAs/InP[001] strained system (lattice mismatch 3.2%) can take place via the formation of either Quantum Dots, when the nucleation is isotropic and randomly distributed, or of Quantum Wires (QW), if this is governed by the pre-existing surface anisotropy. In our case, InAs QW are formed above a thick InP layer that have been grown by Molecular Beam Epitaxy on the InP substrate [1]. The resulting InAs elongated islands in the [1,-1,0] direction have typical sizes: 0.6 < height < 2 nm, length ≈ 5 µm, width ≈ 18 nm and repeating period around 23 nm. Several InAs/InP samples have been studied by local photoluminiscence (PL) at 80 K showing a strong emission centered at 0.87 eV (1.42 µm). The measured PL band fit well to several gaussian components which have been associated to different wire heights. We also measure the emission intensity of light linear polarized parallel or perpendicularly to the wires finding a polarization degree as high as 30%. These experimental features are compared to theoretical results obtained using an eigenfunction-expansion model.
[1] L.González, J.M.García, R. García, J. Martínez-Pastor, C.Ballesteros and F.Briones. Appl. Phys. Lett. in press