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HL: Halbleiterphysik
HL 27: Poster II: SiC (1-7), Ultrakurzzeitdynamik (8-15), Halbleiterlaser (16-20), GaN (21-38), III-V Halbleiter (39-56), Photovoltaik (57-64), Störstellen (65-68), Tern
äre Halbleiter (69-70)
HL 27.5: Poster
Wednesday, March 29, 2000, 14:00–19:00, A
Infrared absorption spectra of 4H silicon carbide — •C. Q. Chen1, R. Helbig1, F. Engelbrecht1, and J. Zeman2 — 1Institute of Applied Physics, University of Erlangen-Nürnberg, Germany — 2High Magnetic Field Laboratory, Grenoble Cedex 9, France
We performed infrared absorption measurements on 4H-SiC samples with the polarizations of E ∥ c and E ⊥ c at 8, 85 and 300K. From the strong temperature dependence of the absorption lines, electronic transitions are separated from vibronic transitions. The electronic transition lines between 300 and 500cm−1 are assigned to the shallow nitrogen donor. The electronic transitions of the shallow nitrogen donor are found to be polarization dependent, which results from the C3V site symmetry of nitrogen donor in 4H-SiC. Zeeman spectra show no linear Zeeman splitting and only a diamagnetic shift of electronic transitions in Faraday configuration (c ∥ B ∥ k). This is consistent with an effective mass tensor of three different diagonal components in 4H-SiC.