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DF: Dielektrische Festkörper
DF 2: Elektrische und optische Eigenschaften II
DF 2.4: Fachvortrag
Monday, March 26, 2001, 15:50–16:10, S18/19
Dielectric relaxation currents in thin film aluminium oxides — •Detlef Diesing1 and Achim W. Hassel2 — 1Lehrstuhl für Oberflächenwissenschaft, Heinrich-Heine-Universität Düsseldorf, — 2Max-Planck-Institut für Eisenforschung, Max-Planck-Str. 1, D-40237 Düsseldorf
When a high electric field strength is applied to an insulator containing traps a non steady state dielectric relaxation current will flow through the insulator. We measured this non steady state current in metal / insulator / metal junctions and its time dependence from the the µ second to the milli second range. Investigations in Ultra High Vacuum with sample temperatures from T = 42 K to T = 420 K allowed the exact characterization of the temperature dependence of the relaxation currents. According to a model first introduced by J.G. Simmons and G.W. Taylor [1] we present model calculations, which explain both the temperature and the time dependence of the relaxation currents by a charge transfer from trap states to the conduction band of the oxide.
[1] J.G. Simmons, G.W. Taylor, Phys. Rev. B. 5 (1972) 553