Parts | Days | Selection | Search | Downloads | Help
DF: Dielektrische Festkörper
DF 7: Ferroelektrische Schichten, Nanostrukturen und Keramiken
DF 7.2: Fachvortrag
Thursday, March 29, 2001, 10:10–10:30, S18/19
a-Axis growth of ferroelectric SrBi2Ta2O9 thin films on silicon — •Juan Carlos Martinez1, Dana Miu1,2, Leonore Wiehl1, Robert Raiteri3, and Herman Adrian1 — 1Institut für Physik, Johannes Gutenberg Universität Mainz, 55099 Mainz, Germany — 2National Institute for Laser Plasma and Radiation Physics, P.O.Box MG-36, 76900 Bucharest, Roumania — 3Department of Biophysical and Electronic Engineering (DIBE), University of Genova, via Opera pia 11a, 16145 Genova, Italy
The enormous potential represented by using ferroelectric materials in memory chips woke up an intensive research activity in the growth and characterization of materials like SrBi2Ta2O9 (SBT). So far by using combinations of different buffer layers c-axis oriented [1] or No-dqnon-c-orientedNo-dq [2] films could be obtained on technical substrates. Unfortunately the anisotropy presented by this material makes that the easy polarization axis is oriented along the (a,b)-plane. By growing SBT films with an in-plane c-axis orientation we could take full advantage of the material properties. In this work we show, that by using a YSZ/SrZrO3 buffer layer we could favor the growth of a-axis oriented SBT thin films on (100)-silicon substrates. Details on the crystalline orientation, surface morphology and dielectric properties will be presented and compared to results obtained on c-axis oriented films [3]. This work was supported by VW-Stiftung, European Union and MWFZ-Mainz. - [1] T.K. Song et al, Appl. Phys. Lett., 69, 3839 (1996), A. Pignolet et al Ferroelectrics, 202, 285 (1997); [2] H.N. Lee et al, Appl. Phys. A-Mater. Sci. Process., 71, 101 (2000); [3] J. Schumacher et al, to appear in Ferroelectrics (2001)