Hamburg 2001 – scientific programme
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O: Oberflächenphysik
O 13: Postersitzung (Adsorption auf Oberfl
ächen, Oberfl
ächenreaktionen, Elektronische Struktur, Epitaxie und Wachstum, Halbleiteroberfl
ächen und Grenzfl
ächen, Oxide und Isolatoren)
O 13.74: Poster
Monday, March 26, 2001, 19:00–22:00, Foyer zu B
Depth profiling using synchrotron radiation with high energetic resolution as demonstrated for Si-, SiC-, SiGe-, and SiGeC-samples — •Ricardo P. Mikalo1, Patrick Hoffmann1, Dieter Schmeißer1, Anita Lloyd-Spetz2, Ingemar Lundström2, Herbert Wawra3, Klaus Pressel4, and Abbas Ourmazd4 — 1Applied Physics - Sensorics, BTU Cottbus, D-03044 Cottbus, Germany — 2Applied Physics, Linköping University, SE-58183 Linköping, Sweden — 3Institute of Crystal Growth - IKZ, D-12489 Berlin, Germany — 4Institute for Semiconductor Physics - IHP, D-15234 Frankfurt (Oder), Germany
Photoelectron spectroscopy utilizing synchrotron radiation of high energetic resolution (more than E/ΔE=3000) was used to record the Si2p emission signal of Si, SiC, SiGe, and SiGeC samples. The spectra exhibit signals of the elemental silicon as well as of fully oxidised silicon. Upon variing the photon energy, and therefore the escape depth of the photoelectrons, we find an oxidic silicon signal which is only half oxidized. This half oxidized silicon is located to be at the interface of the bulk material with the oxide. We determine the thickness of the surface oxide from the total ratio of oxidic and elemental silicon. We find differences between the interface and bulk oxides regarding their elemental composition. The line width of the elemental Si2p-signal exhibits a broadening of approximately 200meV while variing the photoelectron escape depth. This behaviour is interpreted as caused by surface stress.