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Regensburg 2002 – scientific programme

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MA: Magnetismus

MA 10: Poster : Dünne Schichten(1-21),Spinabh.Transp.(22-39),Exch.Bias(40-51),Spindyn.(52-55),Mikromag.(56-66),Partikel(67-74),Abb.Verf.(75-77),Oberfl.+Spinelektr.+Elektr.Theo+Mikromag(75-87),PÜ+Aniso+Werkst/Leg.(88-103),Mol.Mag.+N-dim+Messm.+Postdead(104-111

MA 10.48: Poster

Tuesday, March 12, 2002, 15:00–19:00, Bereich A

Epitaxial Fe/MgO/Fe(110) trilayers as a model system for magnetic tunnel junctions — •J. O. Hauch, P. Turban, M. Fraune, K. Brüggemann, U. Rüdiger, and G. Güntherodt — II. Physikalisches Institut, Rheinisch-Westfälische Technische Hochschule Aachen, D-52056 Aachen, Germany

Recently theoretical and experimental efforts have been devoted to the study of epitaxial magnetic tunnel junctions (MTJs). Such model systems are essential for the fundamental understanding of the spin-dependent tunneling mechanism. Here, first results on the epitaxial growth of thin insulating MgO(110) barriers on Fe(110) layers are presented. The Fe(110) surface is of interest due to its high spin polarization of -80% at the Fermi level EF at T=285 K, as recently shown by spin-polarized photoemission experiments [1]. First, a single-crystalline Fe(110) electrode has been grown on an Al2O3(1120) substrate with the use of a Mo(110) seed layer, resulting in atomically flat Fe(110) films. An epitaxial growth of insulating MgO(110) films on Fe(110) layers has been achieved by electron beam evaporation. The growth mode and the structural properties of MgO(110) layers have been studied by RHEED, LEED, and STM/AFM.

Y. Dedkov, U. Rüdiger, and G. Güntherodt, Phys. Rev. B, in press.

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