Regensburg 2002 – wissenschaftliches Programm

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SYME: Mechanical Properties of Thin Films

SYME VI: HV VI

SYME VI.1: Hauptvortrag

Dienstag, 12. März 2002, 17:30–18:00, H 16

Sensors and the influence of process parameters and thin films — •Hans Reiner Krauß — Robert Bosch GmbH, 72762 Reutlingen

Design of semiconductor silicon sensors is based on physical principles and the variation of geometry and material parameters. Normally in MEMS design a conversion method from nonelectrical input to an electrical output signal is choosen to get a good linear sensor. During miniaturization and increase of the accuracy the device behaves no more linear.

For different function (e.c. sensitivity, resolution) and quality parameters (e.c. drift, burst pressure) of a device temperature coefficients (TC) nonlinearities, hysteresis and so on take place. Additional during characterization you find offsets and other effects, not described in your physical model of the device.

The reason for this is that in thin films natural constants, like the k-Faktor of metallic resistance, are influenced of process parameters, inhomogenities in the capacity are influenced by process steps or geometry parameters have influence to void generation. For sensor design this all has to be modeled, that means we have to investigate microscopic effects.

The influence of thin layers to the function of a sensor is shown for Yaw rate sensors, pressure sensors, mass flow sensors and chemical sensors.