Regensburg 2002 – scientific programme
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SYOH: Organische Halbleiter
SYOH 7: Poster
SYOH 7.11: Poster
Monday, March 11, 2002, 18:00–21:00, C
Structural and morphological transitions in thin films of PTCDA/Ag(111) — •B. Krause1, A. Dürr1, K. Ritley1, F. Schreiber1,2, H. Dosch1,2, and D. M. Smilgies3 — 1Max-Planck-Institut für Metallforschung, Heisenbergstr. 1, D-70569 Stuttgart — 2Institut für Theoretische und Angewandte Physik, Universität Stuttgart, D-70550 Stuttgart — 3Cornell University, CHESS, Ithaca, NY 14853, USA
The structure and the morphology of PTCDA (3,4,9,10-perylene-tetracarboxylic dianhydride) grown epitaxially on Ag(111) substrates have been studied using in-situ grazing incidence X-ray diffraction (GIXD), in situ X-ray scattering during deposition of the film, and non-contact atomic force microscopy (NC-AFM). A temperature-dependent transition from relatively smooth films to islanding has been observed. This transition can be related to the structural differences between a thin film and a monolayer PTCDA/Ag(111), in which strain appears to be crucial. The transition seems to be strain-driven. The strain relaxation mechamism of a film growth at room temperature and a film deposited at 200∘C differ in several morphological and structural aspects.