Dresden 2003 – wissenschaftliches Programm
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DF: Dielektrische Festkörper
DF 8: Dielektrische und ferroelektrische Schichten, Nanostrukturen und Rastermethoden
DF 8.8: Vortrag
Donnerstag, 27. März 2003, 12:10–12:30, HSZ/403
Epitaxial ferroelectric thin films of YMnO3 on Si(111) using Y2O3 as buffer layer by Molecular Beam Epitaxy — •A.R. Raju1, B. Stahl1,2, V. Kishor1,3, S. Gottschalk1, and H. Hahn1 — 1Fachbereich Material- und Geowissenschaften, Petersenstr. 23, TU Darmstadt, 64287 Darmstadt — 2Thin Films Division, Materials Science, Petersenstrasse 23, Technische Universität Darmstadt, 64287 Darmstadt — 3Indian Institute of Technology Madras, Chennai, India
YMnO3 is a ferroelectric material without any volatile elements like Bi and Pb and can also be grown epitaxially on Si(111) substrates. The materials high Tc and moderate dielectric constant (k ≈25) is ideal for ferroelectric random access memories (FRAMs) in metal ferroelectric semiconductor FET (MFSFET) devices. We have deposited films of Y2O3 on Si(111) as buffer layer at 600∘C and then deposited YMnO3 films on these buffer layers at 800∘C. We have employed separate sources of Y2O3 and Mn2O3 for the film deposition. X-ray diffraction, rocking curve and cross-sectional HRTEM measurements show that Y2O3 as well as YMnO3 are grown epitaxially on Si(111) substrates. The growth direction of Y2O3 and YMnO3 films on Si (11l) substrate are demonstrated to be (111) and (001) respectively.