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DS: Dünne Schichten

DS 13: Schichteigenschaften III

DS 13.4: Talk

Wednesday, March 10, 2004, 17:30–17:45, HS 31

Characterization of the amorphous-crystalline silicon interface by time resolved surface photovoltage and photoluminescence techniques — •Abdelazize Laades, Klaus Kliefoth, Rolf Stangl, Manfred Schmidt, and Walther Fuhs — Hahn-Meitner-Institut Berlin, Abt. Silizium Photovoltaik, Kekuléstr. 5, D-12489 Berlin

Amorphous silicon/crystalline silicon interfaces (a-Si:H/c-Si) were prepared by plasma enhanced chemical vapor deposition and analyzed by time resolved surface photovoltage method (TR-SPV) and photoluminescence spectroscopy (PL). To characterise the interfaces formed by varying the process parameters, the c-Si substrate is excited through the a-Si:H layer by high intensity laser pulses such that the excess carriers are predominantly generated in c-Si. It is shown that TR-SPV and PL methods are sensitive to the nonradiative recombination at the a-Si:H/c-Si interface. A qualitative approach to interpret SPV transients is presented and discussed. Applying this approach, we come to the conclusion that the best interface quality is reached at a substrate temperature around 230 ^∘C and that the a-Si:H film thickness in the range between 5 nm and 200 nm has no influence on the a-Si:H/c-Si interface properties.