Regensburg 2004 – scientific programme

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HL: Halbleiterphysik

HL 10: Baulemente

HL 10.2: Talk

Monday, March 8, 2004, 15:30–15:45, H13

The Source-Gated Thin-Film Transistor — •Thomas Lindner¹, Gernot Paasch¹, and Susanne Scheinert² — ¹IFW Dresden — ²TU Ilmenau

In thin-film transistors as usual the channel is controlled by the gate and the current saturates when the drain end of the channel becomes depleted due to the drain voltage. For this operation the channel contacts to source and drain must be ohmic. Recently, source-gated thin-film transistors (SGT) made by undoped a-Si:H have been introduced¹. In the SGT there is no direct contact between source and the channel. This design is essentially the same as that one of the top contact (TOC) organic field-effect transistor (FET)^2,3. In the SGT in addition the source contact is chosen as a depletion (Schottky) contact. In Refs. (2,3) the TOC FET has been investigated also for Schottky contacts. In contrast to the advantages of the SGT proposed in Ref. (1) we found that apart from the unusual voltage dependencies of the current, the main feature of the Schottky-contacted TOC FET is a strongly reduced current due to the series resistance between source and the channel. Here a detailed simulation study for the a-Si:H based SGT is presented revealing the operation mode of this device.
¹ J.M. Shannon, E.G. Gerstner, IEEE ED Letters 24 (2003) 405.
² S. Scheinert, G. Paasch, T. Lindner, Synth. Met. 137 (2003) 1451.
³ T. Lindner, G. Paasch, S. Scheinert, J. Mat. Res., submitted.