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Regensburg 2004 – scientific programme

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HL: Halbleiterphysik

HL 12: Poster I

HL 12.2: Poster

Monday, March 8, 2004, 16:30–19:00, Poster A

Deep level transient spectroscopy on copper indium gallium diselenide thin film solar cells with different gallium content — •V. Mertens1, R. Reineke-Koch2, M. Köntges2, and J. Parisi11University of Oldenburg, 26111 Oldenburg — 2Instiute for Solar Engery Research, 31860 Emmerthal

One approach to increase the open circuit voltage Voc of Cu(In,Ga)Se2 solar cells is to widen the bandgap Eg by using higher gallium contents than in the standard composition which has a gallium to gallium plus indium ratio (GGI) of about 0.28. However further investigations on these materials showed that their Voc is lower than expected from the empirical relationship Voc=Eg−0.5 V which holds for Eg≤1.3 eV. To understand more about the whole alloy system, we focused on the defects and the change in their characteristics with composition. For our measurements we use a home build deep level transient spectrometer based on a Boonton 7200B capacitance bridge. We investigated different samples covering the whole alloy range with different DLTS techniques as majority and minority carrier DLTS, reverse-bias pulsed DLTS. We found that the transients are poorly described by a sum of several monoexponential decays. Therefore other analyses were conducted to determine the underlying physical mechanism.

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