Regensburg 2004 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 12: Poster I

HL 12.62: Poster

Montag, 8. März 2004, 16:30–19:00, Poster A

Ordering and strain in lateral InAs quantum dot molecules — •B. Krause¹, T. H. Metzger¹, R. Songmuang², A. Rastelli², and O. G. Schmidt² — ¹European Synchrotron Radiation Facility, BP 220, F-38043 Grenoble Cedex, France — ²Max-Planck-Institut für Festkörperforschung, Heisenbergstraße 1, D-70569 Stuttgart, Germany

Lateral quantum dot molecules are ordered arrangements of several quantum dots placed one near the other. For InGaAs and InAs on GaAs(100), it has been shown that they can be produced by molecular beam epitaxy exploiting a self-organization process: the quantum dots nucleate preferentially around nanoholes in the substrate [1,2]. The number of quantum dots forming one molecule can be controlled by the substrate temperature.

The growth of the quantum dot molecules results from a combination of kinetic and energetic effects including surface diffusion, strain and interdiffusion in the quantum dots. Here, the results of x-ray diffraction experiments are presented giving insight into the shape, the size, the strain, and the ordering of the quantum dot molecules. This information is necessary for the understanding of the formation process of the dot molecules.

[1] O. G. Schmidt et al., IEEE J. Sel. Top. Quantum electorn 8, 1025 (2002)

[2] R. Songmuang et al., Appl. Phys. Lett. 82, 2892 (2003)