Regensburg 2004 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 12: Poster I
HL 12.72: Poster
Montag, 8. März 2004, 16:30–19:00, Poster A
Selective area growth of self-organized ZnSe structures on patterned GaAs with SiO2, Si3N4 or carbonaceous masks by molecular-beam epitaxy — •J. Lupaca-Schomber1, B. Daniel1, M. Hetterich1, P. Pfundstein2, and D. Gerthsen2 — 1Institut für Angewandte Physik and Center for Functional Nanostructures (CFN), Universität Karlsruhe, D-76131 Karlsruhe, Germany — 2Laboratorium für Elektronenmikroskopie and CFN, Universität Karlsruhe, D-76128, Germany
We describe the selective area growth of self-organized ZnSe structures on patterned GaAs (001) surfaces. Growth was performed by molecular-beam epitaxy (MBE) on masked GaAs substrates at temperatures ranging from 280∘C to 340∘C. The mask consisted of either carbon, SiO2 or Si3N4. The carbonaceous mask deposition was achieved by electron-beam irradiation in a scanning electron microscope, the other mask types were prepared by electron beam lithography. The same pattern was used for all masks, namely a periodical arrangement of square areas with sizes from 0.5× 0.5 µm2 to 1.5× 1.5 µm2. To assess the grown structures we used optical and scanning electron microscopy (SEM) as well as atomic force microscopy (AFM).