Regensburg 2004 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 12: Poster I
HL 12.88: Poster
Montag, 8. März 2004, 16:30–19:00, Poster A
Room temperature UHV bonding of Si to GaAs — •Alin Mihai Fecioru, Stephan Senz, and Ulrich Goesele — Max-Planck-Institut für Mikrostrukturphysik, 06120 Halle
The traditional method of wafer bonding of Si to GaAs at room temperature followed by heating to high temperatures is not possible due to the difference in the thermal expansion coefficients of the two materials.
Our interfaces were obtained by ultrahigh vacuum (UHV) wafer bonding at room temperature, without any intermediate layer. The cleaning of Si wafers was done with RCA solution followed by HF tip. In the UHV the hydrogen is thermally desorbed at 480 ∘C. A UV/ozone treatment is applied to GaAs wafers in order to remove organic contamination. This induces the formation of a complex oxide which will be thermally desorbed at 450 ∘C in UHV. An atomic hydrogen induced modification of Ga2O3 into Ga2O enhances the process.
Electrical properties of n-GaAs (100)/ p-Si (100) interfaces were investigated by temperature dependent current-voltage measurements. A high concentration of electrically active defects is observed at the interface. Additional tunneling contributions (for highly doped samples) cause a high leakage current.