Regensburg 2004 – wissenschaftliches Programm
HL 32.5: Vortrag
Mittwoch, 10. März 2004, 18:45–19:00, H17
Microscopic Calculation of Relaxation Times in Semiconductor Laser Structures — •Sascha Becker1, Angela Thränhardt1, Stephan W. Koch1, Jörg Hader2, Jerome V. Moloney2, and Weng W. Chow3 — 1Fachbereich Physik und Zentrum für Materialwissenschaften, Philippsuniversität Marburg, Renthof 5, 35032 Marburg — 2Arizona Center of Mathematical Sciences and Optical Sciences Center, University of Arizona, Tucson, Arizona 85721 USA — 3Sandia National Laboratories, Albuquerque, NM 87185-0601 USA
In semiconductor laser structures, scattering times were classically obtained by fits to experiment. Although this allows one to fit experimental spectra, this “theory” has no predictive capability. A microscopic inclusion of scattering, on the other hand, is very complex and time-consuming. We attempt to remedy this dilemma by extracting effective scattering rates from a microscopic calculation and using these in a relaxation time model, obtaining good agreement with a microscopic model for the general features. We discuss dependencies of relaxation times on different parameters, e.g. carrier distribution and band structure.