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Regensburg 2004 – scientific programme

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HL: Halbleiterphysik

HL 33: III-V Halbleiter I

HL 33.3: Talk

Wednesday, March 10, 2004, 18:45–19:00, H14

Annealing of InN layers in a MOVPE reactor investigated by in-situ Spectroscopic Ellipsometry. — •Christoph Werner, Massimo Drago, Torsten Schmidtling, Udo W. Pohl, and Wolfgang Richter — TU-Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, 10623 Berlin

Spectroscopic Ellipsometry (SE) is a powerful optical in-situ analysis tool for growth monitoring of non-cubic materials, as already demonstrated for GaN epitaxy [1].

Therefore we use SE in order to study annealing of epitaxial InN layers grown under different gaseous ambients (NH3, N2 and H2) in the growth temperature regime.

It was found that a hydrogen ambient during annealing leads to a surface roughening. In contrast, pure nitrogen induces surface smoothening for temperatures above 540C, while roughening becomes dominant at temperatures exceeding 580C. A small addition of ammonia to the N2 ambient, however, induces surface roughening already at 550C. This shows that, in contrast to GaN, ammonia is not suitable to stabilize InN at growth temperature. This might be due to the presence of hydrogen as a consequence of ammonia decomposition.

[1] S. Peters, T. Schmidtling, T. Trepk, U. W. Pohl, J.-T. Zettler, W. Richter, J. Appl. Phys. 88, 4085 (2000)

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