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Regensburg 2004 – scientific programme

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HL: Halbleiterphysik

HL 37: Quantenpunkte und -drähte: Transporteigenschaften

HL 37.7: Talk

Thursday, March 11, 2004, 11:45–12:00, H13

Hole transport through an array of self-assembled Ge quantum dots — •Kai-Martin Haendel1, U. Denker2, O. G. Schmidt2, and R. J. Haug11Institut für Festkörperphysik, Universität Hannover, Appelstr. 2, 30167 Hannover — 2Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, 70569 Stuttgart

In recent years, several features of quantum states in self-assembeld Ge quantum dots have been demonstrated by various spectroscopic studies, such as admittance, capacitance-voltage analysis, photoluminescence and photoluminescence excitation spectroscopy.
We use transport spectroscopy to determine the electronic properties of self-assembeld Ge hut cluster quantum dots that are embedded in the quantum well of a Si/SiGe-based resonant tunnelling diode. At temperatures below 300 mK and high magnetic fields scaling behavior in the non-linear current-voltage (IV) characteristic, switching events and hysteresis are observed and are dedicated to states of a collective charge mode.

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