DPG Phi
Verhandlungen
Verhandlungen
DPG

Regensburg 2004 – scientific programme

Parts | Days | Selection | Search | Downloads | Help

HL: Halbleiterphysik

HL 44: Poster II

HL 44.25: Poster

Thursday, March 11, 2004, 16:30–19:00, Poster A

Fabrication of Resonant-Tunneling Diodes by B Surfactant Modified Growth of Si Films on CaF2/Si — •C.R. Wang, M. Bierkandt, B.H. Müller, S. Paprotta, E. Bugiel, T. Wietler, and K.R. Hofmann — Institute for Semiconductor Devices and Electronic Materials, University of Hannover, Appelstr. 11A, 30167 Hannover, Germany

Boron (B) surfactant enhanced solid phase epitaxy (SPE) of thin Si films on CaF2/Si(111) substrates has been studied. Room temperature deposition of amorphous Si films followed by the deposition of one monolayer B atoms resulted in continuous and smooth epitaxial Si layers on CaF2 with a sharp B-induced √3x√3R30 surface reconstruction after annealing to about 635C. This growth technique was used to fabricate CaF2/Si/CaF2 double-barrier resonant tunneling diodes (RTDs) in SiO2 windows patterned on Si(111) substrates. A negative differential resistance (NDR) peak was found at ∼0.2 V at 77 K, and the current density at the NDR peak was estimated to be 6 orders of magnitude higher than that found in earlier reports.

100% | Mobile Layout | Deutsche Version | Contact/Imprint/Privacy
DPG-Physik > DPG-Verhandlungen > 2004 > Regensburg