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HL: Halbleiterphysik

HL 44: Poster II

HL 44.73: Poster

Thursday, March 11, 2004, 16:30–19:00, Poster A

XRD analysis of Ge- and Ge_xSi_1−x-layers grown by surfactant mediated epitaxy — •T. Wietler and K.R. Hofmann — Institute for Semiconductor Devices and Electronic Materials, University of Hannover, Appelstr. 11A, 30167 Hannover, Germany

Strained Si/Ge-heterodevices provide the opportunity to combine enhanced carrier mobilities with silicon technology. The controlled growth of relaxed virtual Ge_xSi_1−x substrates with high Ge content is a vital precondition for the fabrication of strained layer structures. By surfactant mediated epitaxy (SME) employing Sb as surfactant relaxed Ge_xSi_1−x films can be realized.

Ge_xSi_1−x films with Ge content variying from x=0.7 to 1 were grown by SME on Si(111) substrates. The crystalline quality and the degree of strain relaxation were studied by high resolution X-ray diffraction (HXRD). X-Ray reflection (XRR) was used to measure the surface roughness and film thickness. The X-ray analysis results are compared to those obtained by etch pit density (EPD), auger electron spectroscopy (AES) depth profiling and atomic force microscopy (AFM).