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Regensburg 2004 – scientific programme

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MA: Magnetismus

MA 13: Poster:Schichten(1-23),Spinabh.Trsp(24-41),Exch.Bias(42-56),Spindyn.(57-67),Mikromag.(68-76),Partikel(77-90),Spinelektr.(91-97),Elektr.Theo.(98-99),Mikromag+PhasÜ+Aniso.(100-105),Magn.Mat.(106-118),Messmethod.(119-121),Obflm.+Abbverf.(122-123)

MA 13.35: Poster

Tuesday, March 9, 2004, 15:00–19:00, Bereich A

Epitaxial tunnel junctions based on highly spin-polarized Fe(110) electrodes — growth, fabrication, and transport properties — •J.O. Hauch1, M. Fraune1, H. Kittur1, P. Turban1, U. Rüdiger2, and G. Güntherodt11II. Physikalisches Institut, RWTH Aachen, 52056 Aachen — 2Fachbereich für Physik, Universität Konstanz, 78457 Konstanz

Recently theoretical and experimental efforts have been spent on the study of epitaxial magnetic tunnel junctions (MTJs). Such model systems are essential for the fundamental understanding of the spin-dependent tunneling mechanism. We present the epitaxial growth, the fabrication process, and the transport properties of epitaxial Fe(110)/MgO(111)/Fe(110) MTJs. The highly spin-polarized Fe(110) electrodes [1] separated by an MgO(111) barrier of 4 nm thickness are grown on an Al2O3(1120) substrate by using a Mo(110) seed layer. Tunnel junctions are prepared from these thin film samples using optical and electron beam lithography combined with ion beam etching. The application of the Rowell criteria as well as the Poole-Frenkel analysis [2] to the temperature dependent conductivity confirm an MgO barrier of a high quality. TMR measurements show actually an MR of approximately 13 % at T = 16 K.
This work was supported by the BMBF, contract no. 13N7329.

[1] Yu. S. Dedkov, U. Rüdiger and G. Güntherodt, Phys. Rev. B 65, 064417 (2002).

[2] P. Rottländer et al., Phys. Rev B 65, 054422 (2002).

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