DPG Phi
Verhandlungen
Verhandlungen
DPG

Regensburg 2004 – scientific programme

Parts | Days | Selection | Search | Downloads | Help

O: Oberflächenphysik

O 28: Postersitzung (Elektronische Struktur, Grenzfläche fest-flüssig, Halbleiteroberflächen und -grenzflächen, Magnetismus und Symposium SYXM, Methodisches, Nanostrukturen, Oberflächenreaktionen, Teilchen und Cluster, Zeitaufgelöste Spektroskopie)

O 28.3: Poster

Wednesday, March 10, 2004, 16:00–19:00, Bereich C

Geometric and electronic structure of epitaxial PbS on HfS2 — •J. Iwicki, A. Kamenz, O. Seifarth, S. Habouti, M. Kalläne, and L. Kipp — Institut für Experimentelle und Angewandte Physik, Universität Kiel, D-24098 Kiel, Germany

 
Misfit layer compounds like (PbS)NbS2 form a special class of layered heterostructures. Due to 4-fold symmetries of the PbS layers which contrast the 6-fold symmetry of the NbS2 layers a misfit is constituted. Up to now, bulk crystals of misfit compounds could only be grown with metallic hexagonal layers like e.g. NbS2 or TiS2. Here we show first steps of epitaxial growth of PbS on semiconducting HfS2 with corresponding STM images and angle resolved photoemission spectra for different coverages of PbS on HfS2. The photoemission results are compared with data of clean HfS2 and PbS bulk crystals. The experiments have been performed with the ASPHERE spectrometer at HASYLAB.
Work supported by the BMBF proj. 05 KS1 FKB and DFG Forschergruppe FOR 353

100% | Mobile Layout | Deutsche Version | Contact/Imprint/Privacy
DPG-Physik > DPG-Verhandlungen > 2004 > Regensburg