Regensburg 2004 – scientific programme
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O: Oberflächenphysik
O 28: Postersitzung (Elektronische Struktur, Grenzfläche fest-flüssig, Halbleiteroberflächen und -grenzflächen, Magnetismus und Symposium SYXM, Methodisches, Nanostrukturen, Oberflächenreaktionen, Teilchen und Cluster, Zeitaufgelöste Spektroskopie)
O 28.52: Poster
Wednesday, March 10, 2004, 16:00–19:00, Bereich C
Lead on hydrogen terminated Si(111): A comparison of two different deposition techniques — •C. Rettig1,2, H. Hövel1, V. Chamard1, S. Warren2, T. H. Metzger2, and J. Zegenhagen2 — 1Universität Dortmund, Experimentelle Physik I, D-44221 Dortmund (Germany) — 2European Synchrotron Radiation Facility (ESRF), B.P. 220, F-38043 Grenoble (France)
We studied the epitaxy of electrochemically deposited Pb clusters on Si(111):H dependent on the applied overpotential. The former measurements [1] and the present investigations are carried out in-situ using Cyclic Voltammograms and Surface X-ray Diffraction (SXRD). The specular measurements show a predominant alignment of the Pb(111) plane parallel to the Si(111) plane. In the sample plane the Pb Clusters are aligned along the high symmetry direction of Si confirmed by Grazing Incidence Diffraction (GID). New results indicate a dependency of the Pb clusters alignment in the sample plane on the applied overpotential. Presently we extend our measurements to Ultra High Vacuum (UHV) environment with in-situ deposition of Pb on Si(111):H. This system is studied by Scanning Tunneling Microscopy/Spectroscopy (STM/STS), Low Energy Electron Diffraction (LEED) and Ultraviolet Photoelectron Spectroscopy (UPS).
[1] J. C. Ziegler et al., Surf. Sci. 452, 150 (2000).