Regensburg 2004 – scientific programme
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O: Oberflächenphysik
O 40: Halbleiteroberflächen und -grenzflächen
O 40.12: Talk
Thursday, March 11, 2004, 18:30–18:45, H45
Oxide and Carbon contamination removal from semiconductor surfaces using low-energy hydrogen ion beam etching — •Nasser Razek, Axel Schindler, Dietmar Hirsch, and Bernd Rauschenbach — Leibniz-Institut für Oberflächenmodifizierung e. V., Permoserstrasse 15, 04318 Leipzig, Germany
A new cleaning technology for semiconductor surfaces to remove oxide layers and carbon contamination has been applied to GaAs and Ge surfaces. The cleaning is performed at surface temperatures lower then 300 ∘C using low energy bombardment of mass separated hydrogen (H2+) ion beam of 300 eV ion energy and of about 4.5 µA cm−2 ion current density from a broad beam ion source. In comparison to conventional cleaning, this technique leads to surfaces which are free of contamination and are characterized by an improved roughness. Surfaces have been investigated by the X-ray photoelectron spectroscopy and atomic force microscopy. This work focuses on the development of a room temperature bonding technique for semiconductors of different chemical nature.