Regensburg 2004 – wissenschaftliches Programm

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O: Oberflächenphysik

O 5: Epitaxie und Wachstum I

O 5.1: Vortrag

Montag, 8. März 2004, 11:15–11:30, H44

Growth dynamics of Ge islands on high index Si surfaces — •Marcel Himmerlich1,2, Woochul Yang1, Robert J. Nemanich1, and Juergen A. Schaefer21Department of Physics, North Carolina State University, Raleigh, NC 27695 — 2Institut für Physik and Zentrum für Mikro- und Nanotechnologien, TU Ilmenau, 98684 Ilmenau

The growth dynamics of Ge islands on Si substrates with surface orientation close to (113) has been studied in situ by photoelectron emission microscopy (PEEM) at 450-550C and during annealing up to 700C. The growth rate was varied between 0.1 and 0.6 ML/min. Photoelectrons were excited by UV-light generated by the UV free electron laser at Duke University. First, up to 3-4ML, uniform emission was observed indicating the growth of a strained wetting layer. Then 3D-growth occurred with different island shapes. Low growth rates result in elongated islands in [332] direction, indicating anisotropical strain. At higher deposition rates round islands were created. There, during continuous deposition, islands enlargement was observed with no further nucleation. During annealing, the density of round islands decreased while the average size increased (ripening), whereas the elongated structures undergo a shape transformation leading to indentations.

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