Regensburg 2004 – wissenschaftliches Programm

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SYOH: Organic and Hybrid Systems for Future Electronics

SYOH 7: Molecular Systems and Applications

SYOH 7.2: Fachvortrag

Freitag, 12. März 2004, 11:35–11:55, H1

Ambipolar Organic Field-Effect Transistor based on an Organic Heterostructure — •Constance Rost¹, David J. Gundlach², Siegfried Karg¹, and Walter Rieß¹ — ¹IBM Research, Zurich Research Laboratory, CH-8803 Rüschlikon, Switzerland — ²Laboratory for Solid State Physics, Department of Physics, ETH Zurich, CH-8093 Zürich, Switzerland

Ambipolar charge injection and transport are a prerequisite for a light-emitting organic field-effect transistor (LE-OFET). Organic materials, however, typically show unipolar charge-carrier transport characteristics. Consequently, organic thin-film field-effect transistors based on a single material as active layer can typically either be operated as p- or as n-channel device. We show that by using a heterostructure with pentacene as hole-transport and Ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13H27) as electron-transport material, ambipolar characteristics, i.e. simultaneous p- and n-channel formation, can be observed in a single device. An OFET structure is investigated in which electrons and holes are injected from Mg top and Au bottom contacts into the PTCDI-C13H27 and pentacene layers, respectively. This device architecture serves as a model structure for ambipolar field-effect transistors, which are a prerequisite for light-emitting field-effect transistors.