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VA: Vakuumphysik und Vakuumtechnik
VA 1: Vakuumverfahrenstechnik
VA 1.1: Invited Talk
Monday, March 8, 2004, 09:30–10:10, H47
Nano-fabrication with Focused Ion Beams — •Jacques Gierak1, Ralf Jede2, Lars Bruchhaus2, Toralf Kliem2, and Peter Hawkes3 — 1LPN-CNRS, Route de Nozay, 91460 Marcoussis, France — 2RAITH GmbH, Hauert 18, Technologiepark, 44227 Dortmund, Germany — 3CEMES/CNRS, 29 rue Jeanne Marvig, 31055 Toulouse, France
Focused Ion Beam (FIB) technology today plays an important role in IC manufacturing processes, but it is also a challenging technique for nanotechnology. We will present a Nano-FIB system that was developed specifically for sub-10 nm FIB patterning. This instrument combines the advantages of a very high resolution FIB system with the accuracy of a high precision laser interferometer stage and 10 MHz digital pattern generator. For FIB patterning of devices at the nanometer scale, the appropriate level of interaction between ions and solids shifts towards much lower dose effects. Most target materials involved exhibit very high ion sensitivity, which can reach the 1012 ions/cm2 range. As a direct consequence, chemical or crystal modification of a surface by local ion bombardment offers new possibilities for selective epitaxial growth of materials or selective deposition of nano grains for example. Applications such as organizing gold nanoclusters (nanoelectronics), changing magnetic properties (data storage), defect injection in III/V nano devices and localized epitaxial growth of semiconductor dots, the possibility to place high quality orientated CNT’s at chosen sites, and inorganic lithography experiments will be presented.