Berlin 2005 – scientific programme

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MA: Magnetismus

MA 27: Spindynamik II

MA 27.11: Talk

Tuesday, March 8, 2005, 17:45–18:00, TU H1012

Ultrafast direct writing schemes for SAF MRAM cells — •H.T. Nembach, C. Bayer, M.C. Weber, P. Martin Pimentel, P.A. Beck, B. Leven, and B. Hillebrands — Fachbereich Physik und Forschungsschwerpunkt MINAS, E.-Schroedinger-Str. 56, Technische Universität Kaiserslautern, 67663 Kaiserslautern

Magnetic random access memory (MRAM) will be essential for future data storage. Two important issues, which still need to be improved, are access time and insensitivity against parameter variations, as for instance pulse length and amplitude. Recently a new switching scheme has been introduced for a 4Mbit MRAM demonstrator using a toggle mode for switching [1]. Here we present two direct writing schemes for such a so-called Savtchenko-type MRAM [2]. These writing schemes using two orthogonally oriented bipolar and unipolar magnetic field pulses with time delay allow for ultrafast direct writing with high stability against half select switching. The numerical simulations are based on the Stoner Wohlfarth model and a Runge Kutta integration of the Landau-Lifshitz and Gilbert equation.

This work was supported by the DFG-Graduiertenkolleg 792, the Studienstiftung des Deutschen Volkes, and the EU-RTN ULTRASWITCH network (HPRN-CT-2002-00318).

[1] Savtchenko et al., US Patent 6,545,906 B1, Apr. 8 (2003).

[2] H. T. Nembach et al, submitted to APL.