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O: Oberflächenphysik
O 49: Epitaxie und Wachstum II
O 49.3: Talk
Tuesday, March 8, 2005, 16:15–16:30, TU EB407
Thin CuInS2 films prepared by MOMBE: Interface and surface properties — •Carsten Lehmann1, Christian Pettenkofer1, and Wolfram Calvet2 — 1Hahn-Meitner-Institut, Glienicker Straße 100, 14109 Berlin — 2SPECS GmbH, Voltastrasse 5, 13355 Berlin
CuInS2 (CIS) films were prepared by MOMBE on Si (111) with TBDS as an organic sulfur source. Film properties were investigated in situ by LEED, XPS and UPS with respect to morphology, chemical composition and electronic structure. Film growth starts with a In-S bufferlayer on H-terminated Si(111) substrates. No carbon contaminations from the sulfur precursor are incorporated in the samples. Depending on the deposition conditions metallic In precipitations or Cu2In phases were detected for the In rich film. A Cu2S surface phase is found for Cu rich films. Cu to In rato and growth temperature were varied and optimised to obtain near stoichiometric CIS films. A bandalignment for the interface with respect to the bufferlayer and Si will be discussed.