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TT: Tiefe Temperaturen
TT 8: Posters Transport
TT 8.5: Poster
Friday, March 4, 2005, 14:00–18:00, Poster TU C
Spin relaxation in Quantum Dots induced by Nyquist Noise — •Florian Marquardt1 and Veniamin A. Abalmassov2 — 1Department of Physics, Yale University, New Haven 06520, USA — 2Institute of Semiconductor Physics SB RAS and Novosibirsk State University, 630090 Novosibirsk, Russia
We analyze the spin relaxation rate T1−1 for an electron inside
a quantum dot that is subject to the Nyquist voltage fluctuations of
the confining metallic gates. In combination with spin-orbit coupling,
this leads to a relaxation rate that depends on the direction of the
magnetic field and the impedance matrix of the gate circuit, providing
possibilities for distinguishing this mechanism from other
sources of relaxation.
[1] F. Marquardt and V. A. Abalmassov, cond-mat/0404749 (2004)