Dresden 2006 – wissenschaftliches Programm
CPP 23.28: Poster
Donnerstag, 30. März 2006, 17:00–19:00, P2
P(VDF/TrFE) as ferroelectric insulation layer for organic field effect transistors — •Klaus Müller, Karsten Henkel, Ioanna Paloumpa, and Dieter Schmeisser — Brandenburgische Technische Universität Cottbus, Angewandte Physik-Sensorik, Konrad-Wachsmann-Allee 1, 03046 Cottbus
The ferroelectric polymer poly(vinylidene fluoride trifluoroethylene) (P(VDF-TrFE)) is used as insulating material for organic field effect transistors (OFET) and metal-insulator-semiconductor (MIS)-structures. For the MIS-structures, we find the typical hysteresis in the CV characteristic upon increasing the voltage scan window. Based on these results, we fabricate OFET with regioregular poly(3-hexlythiophene) (P3HT) as organic semiconductor. The transistors are constructed in bottom gate architecture with thin layers of spincoated P(VDF-TrFE) as gate insulation (100nm). The drain-source current of the OFET is reversible affected by the polarized gate, which gives opportunities for organic nonvolatile memory elements. We present characteristic features like the hysteretic drain current response or the data retention. Furthermore, we present measurements with Kelvin probe force microscopy, a method which gives informations on the lateral distributions of the surface potential.