Dresden 2006 – wissenschaftliches Programm
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DS: Dünne Schichten
DS 17: Ion beam solid interaction II
DS 17.4: Vortrag
Donnerstag, 30. März 2006, 12:00–12:15, GER 37
Ion beam enhanced etching of LiNbO3 — •Thomas Gischkat1, Frank Schrempel1, Holger Hartung2, Ernst-Bernhard Kley2, and Werner Wesch1 — 1Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena, Germany — 2Institut für Angewandte Physik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena, Germany
Single crystals of z-cut and x-cut LiNbO3 were irradiated at room temperature and 15 K using 350 keV Ar+-ions with ion fluences between 5×1012 and 1×1015 cm−2. The damage formation investigated with RBS channeling analysis depends on the crystal cut as well as the irradiation temperature. Irradiation of z-cut material at 300 K provokes complete amorphisation at 0.4 dpa (displacements per target atom). In contrast 0.27 dpa are sufficient to amorphise the x-cut LiNbO3. Irradiation at 15 K reduces the number of displacements per atom necessary for amorphisation to 0.18 dpa. To study the etching behavior 400 nm thick amorphous layers were generated via multiple irradiation with Ar+-ions of different energies and fluences. Etching was performed in a 3.6% HF-solution at 40 ∘C. Whereas the etching rate of the perfect crystal is negligible, that of amorphised regions amounts to 80 nm min−1. The influence of the ion fluence, the irradiation temperature and subsequent thermal treatment on damage and etching of LiNbO3 is discussed.
In conlusion, negligible etching of the perfect crystal, high etching rates and high contrast of Ion Beam Enhanced Etching (IBEE) allow the realisation of high aspect ratio microstructures in LiNbO3.