Dresden 2006 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
HL: Halbleiterphysik
HL 13: Spin controlled transport I
HL 13.6: Vortrag
Dienstag, 28. März 2006, 12:15–12:30, BEY 118
Rashba Spin Splitting in GaN Heterostruckturen — •Wolfgang Weber1, S.D. Ganichev1, Z.D. Kvon2, V.V. Belkov3, L.E. Golub3, S.N. Danilov1, D. Weiss1, W. Prettl1, Hyun-Ick Cho4, and Jung-Hee Lee4 — 1Institut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040 Regensburg — 2Institut für Halbleiterphysik, Novosibirsk, 630090, Russland — 3A. F. Ioffe Physikalisch-Technisches Institut, 194021 St. Petersburg, Russland — 4Kyungpook Staatliche Universität, 1370, Sankyuk-Dong, Daegu 702-701, Korea
The spin splitting in k-space of the conduction band of low-dimensional GaN-structures was experimentally proved. It is shown, that the excitation of (0001)-oriented GaN quantum wells with infrared or terahertz radiation causes the circular photogalvanic effect. From a microscopical point of view this effect is a consequence of spin-orbit-coupling, which removes the spin-degeneration of the carriers in k-space, and the optical selection rules. The observation leads to a tunable Rashba-like spin splitting, which comes from the built-in asymmetry of the AlGaN/GaN interface. This fact, together with the anticipated high curie temperature under Mn doping and the long spin relaxation times, makes GaN an interesting material for spintronics.