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HL: Halbleiterphysik

HL 15: III-V semiconductors II

HL 15.7: Talk

Tuesday, March 28, 2006, 12:30–12:45, POT 51

Electronic Transport Studies of Single InAs Nanowhiskers — •Quoc Thai Do — University Duisburg-Essen, Solid-State Electronics Dept., Lotharstr. 55 / ZHO, D-47057 Duisburg

InAs nanowhiskers were grown in the vapour-liquid-solid growth mode using low-pressure metal-organic vapor phase epitaxy. Electrical characterization of single nanowhiskers was done by conductive scanning force microscopy directly of the wafer. Contacting the whiskers scratched from the wafer and deposited on an insulator-covered conductive substrate using e-beam lithography allowed to realize the field-effect transistor consisting of single nanowhisker only. We observed the n-type conductivity of the nominally undoped whisker material. The nanowhisker-based transistors showed with well-defined linear regimes and pronounced switching behaviour at room temperature. Using the data of I-Vg measurements on the nanowhiskers with different n-doping concentration, the electron density and the electron mobility within investigated nanowhiskers could be estimated. Mechanism of electron transport through the nanowhisker in dependence on the nanowhisker dimensions are discussed. Our work demonstrate the feasibility of nanoelectronic and nanosensor applications for III-V nanowhiskers.

Quoc Thai Do, Ingo Regolin, Victor Khorenko, Werner Prost, Franz Josef Tegude University Duisburg-Essen, Duisburg, Germany Solid-State Electronics Department, Lotharstr. 55 / ZHO, D-47057 Duisburg