Dresden 2006 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
HL: Halbleiterphysik
HL 21: Transport properties I
HL 21.10: Vortrag
Dienstag, 28. März 2006, 18:45–19:00, BEY 118
Thermoelectric cooling: a new approach — •G.N. Logvinov1, J. E. Velazquez2, and Yu. G. Gurevich2,3 — 1SEPI-ESIME Culhuacan, I.P.N., Santa Ana 1000, Culhuacan, C.P. 04430, D.F., Mexico — 2Depto. de Física Aplicada, Universidad de Salamanca, Pza. de la Merceds/n, E-37008 Salamanca, Spain — 3On leave at the University of Salamanca. Permanent address: Depto. de Física, CINVESTAV-IPN, D.F., Mexico
A new approach is suggested to explain the Peltier effect. It assumes that the Peltier effect is not an isothermal effect. The approach is based on the occurrences of induced thermal fluxes in a structure which consists of two conducting media, through which a dc electric current flows [1]. These induced thermal diffusion fluxes arise to compensate for the change in the thermal flux caused by the electric current (the drift thermal flux) flowing through the junction, in accordance with the general Le Châtelier*Braun principle. The occurrence of these thermal diffusion fluxes leads to temperature heterogeneity in the structure and, as a result, to a cooling or heating of the junction. Within the framework of this concept, the thermoelectric cooling is analysed. It is shown that in the general case the Peltier effect always occurs together with another thermoelectric effect [1]. This thermoelectric effect is predicted for the first time. Both these effects essentially depend on the junction surface thermal resistance [2].
[1] Yu. G. Gurevich and G.N. Logvinov 2005 Semicon. Sci. Technol. vol. 20 R57 [2] Gurevich Yu G and Logvinov G N 1992 Sov. Phys. Semicond. vol. 26 1091