Dresden 2006 – scientific programme
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HL: Halbleiterphysik
HL 29: Transport properties II
HL 29.3: Talk
Wednesday, March 29, 2006, 17:30–17:45, HSZ 01
Ballistic rectification in single and cascaded nanoscale cross junctions — •Michael Knop1, Ulrich Wieser1, Ulrich Kunze1, Dirk Reuter2, and Andreas D. Wieck2 — 1Werkstoffe und Nanoelektronik, Ruhr-Universität Bochum, D-44780 Bochum — 2Angewandte Festkörperphysik, Ruhr-Universität Bochum, D-44780 Bochum
Ballistic rectification is demonstrated in a nanoscale four-terminal Ψ-shaped semiconductor cross junction consisting of a straight voltage stem and current-injecting branches [1]. The devices are fabricated from a high mobility GaAs/AlGaAs-heterostructure by use of a mix-and-match process combining low-energy electron-beam lithography on negative-tone resist calixarene with standard photo lithography [2]. According to a simple billiard-like picture the rectifying effect relies on the pure inertial ballistic motion of the electrons through the junction. Rectification is obtained up to temperatures of T = 125 K. A possible remedy for the low rectification efficiency η = Vout/|Vin|≈3% of a single device is a cascade of identical rectifier stages. DC transport-measurements on a cascade of two rectifier stages show the expected enhancement of the output voltage compared to a single rectifier.
[1] M. Knop et al., Physica E (accepted)
[2] M. Knop et al., Semicond. Sci. Technol. 20, 814 (2005)