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Dresden 2006 – scientific programme

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HL: Halbleiterphysik

HL 31: Organic semiconductors

HL 31.11: Talk

Wednesday, March 29, 2006, 17:15–17:30, POT 51

Comparison of two-dimensional device simulations with potentiometry measurements on pentacene OFETS — •R Scholz1, F. Müller1,2, A.-D. Müller1,2, M. Hietschold1, I. Thurzo1, D. R. T. Zahn1, C. Pannemann3, and U. Hilleringmann31Institut für Physik, TU Chemnitz — 2Anfatec Instruments AG, Oelsnitz — 3Elektrotechnik und Informationstechnik, Universität Paderborn

Potentiometry with a Kelvin probe atomic force microscope is used to investigate the contact resistances of pentacene OFETs. The potentiometry measurements are performed ex situ under atmospheric conditions after storing the samples in air for several weeks. At room temperature, the device performance is limited by the resistance at the Au/pentacene injection contact, so that the mobility in the channel region as deduced from potentiometry is about one order of magnitude higher than the value obtained from the output characteristics [1].
From two-dimensional device simulations in the accumulation regime, we can deduce the hole mobility close to the interface between the active channel and the SiO2 gate insulator. In the pinchoff regime, the charge carriers are pushed away from the gate towards the interface pentacene/air. The comparison between the device simulation and the potentiometry traces reveals a larger mobility in this region of the pentacene film. This finding indicates trap states at the pentacene/SiO2 interface, probably related to adsorbed water molecules.

[1] R. Scholz, A.-D. Müller, F. Müller, I. Thurzo, B. A. Paez, L. Mancera, D. R. T. Zahn, C. Pannemann, and U. Hilleringmann, Proc. of SPIE 5940 (2005), 59400I.

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