Dresden 2006 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 44: Si/Ge

HL 44.1: Vortrag

Donnerstag, 30. März 2006, 12:15–12:30, BEY 118

Polycrystalline Silicon Films Obtained from Spin-coated Dispersed Nanocrystalline Silicon Layers — •R. Lechner¹, Nuryanti¹, C. Oberhüttinger ¹, M. S. Brandt¹, A. Ebbers², F.-M. Petrat², and M. Stutzmann¹ — ¹Walter Schottky Institut, Technische Universität München, Am Coulombwall 3, 85748 Garching — ²Degussa AG, Paul-Baumann-Str. 1, 45764 Marl

Polycrystalline silicon thin films on inexpensive substrates are of interest for thin film electronics and large area applications such as display panels or solar cells. A method known to produce continuous films of high quality polycrystalline silicon at relatively low temperatures is the aluminum induced layer exchange (ALILE). This process can be used to crystallize amorphous silicon deposited onto metal aluminum layers by simple annealing of the bilayer a-Si/Al stack at temperatures ranging from 300^∘C to 570^∘C. Here, we present first results obtained by replacing the amorphous silicon film by a layer of silicon nanoparticles spin-coated from dispersion with an organic solvent. Despite the crystalline nature of the initial nanocrystalline silicon layers and their high porosity, the growth of polycrystalline nuclei has been observed during annealing. By an appropriate choice of the sample configuration, conductive layers of polycrystalline silicon can be obtained. The structural, optical and electrical properties of the resulting films will be discussed.