Dresden 2006 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 46: Quantum dots and wires: Preparation and characterization II
HL 46.3: Vortrag
Donnerstag, 30. März 2006, 15:45–16:00, POT 51
Transport through a (double) quantum dot fabricated with resorcinarene resist — •Monika Fleischer1, Friedhelm Panteleit1, David A. Wharam1, David A. Ritchie2, and Michael Pepper2 — 1Institut für Angewandte Physik, Universität Tübingen, Auf der Morgenstelle 10, D-72076 Tübingen — 2Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge CB3 0HE, UK
As an alternative to the conventional split-gate approach, quantum dots can be created in the 2dim electron gas of a GaAs/AlGaAs-heterostructure by using continuous metallic gates in combination with a resist pattern. The resist marks out regions in which the gate voltage Vg is screened from the electron gas. Using this technique, multiple structures can be defined by a single gate. At high negative gate voltages, the screening breaks down and the gate region turns into a tunable barrier. We have investigated C-methyl-calix[4]resorcinarene as a novel high resolution negative resist for electron beam lithography, which has excellent properties for the envisaged applications. A single quantum dot was fabricated via a dot-shaped resist pattern crossed by three continuous gates. Transport measurements show Coulomb blockade oscillations, which at high |Vg| change into the characteristics of a double dot with decreasing interdot coupling.