HL 48: Preparation and characterization
Thursday, March 30, 2006, 15:15–16:30, POT 151
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15:15 |
HL 48.1 |
Silicon Nanowire Surround-Gate Field-Effect Transistor — •Volker Schmidt, Heike Riel, Stephan Senz, Siegfried Karg, Walter Riess, and Ulrich Goesele
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15:30 |
HL 48.2 |
Impact of Focussed Ion Beam (FIB) Preparation on the Potential Structure of Silicon Semiconductors — •Andreas Lenk and Uwe Mühle
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15:45 |
HL 48.3 |
Ultra-high vacuum direct bonding of GaAs- to Si-wafer using low-energy hydrogen ion beam surface cleaning — •N. Razek, A. Schindler, and B. Rauschenbach
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16:00 |
HL 48.4 |
Static and dynamic capacitance measurements on the nanoscale — •Stefan Jaensch, Christoph Henkel, Heidemarie Schmidt, and Marius Grundmann
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16:15 |
HL 48.5 |
A Cryogen Free Magnet For Use In EPR — •Jeremy Good, Renny Hall, and A. I Smirnov
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