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DPG

Dresden 2006 – scientific programme

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HL: Halbleiterphysik

HL 50: Poster II

HL 50.100: Poster

Thursday, March 30, 2006, 16:30–19:00, P3

Lattice parameters of CuAu- and chalcopyrite-phase of epitaxial CuInS2 on silicon substrates — •Janko Cieslak1, Thomas Hahn1, Jürgen Kräußlich2, Heiner Metzner1, Jens Eberhardt1, Mario Gossla1, Udo Reislöhner1, and Wolfgang Witthuhn11Institut für Festkörperphysik, Friedrich Schiller Universität Jena, Max-Wien-Platz 1, 07743 Jena — 2Institut für Optik und Quantenelektronik, Friedrich Schiller Universität Jena, Max-Wien-Platz 1, 07743 Jena

Epitaxial thin films of CuInS2 (CIS) were grown on Si(111) and Si(100) substrates using molecular beam epitaxy from elemental sources. Their lattice parameters were measured by means of x-ray diffraction at the European Synchrotron Radiation Facility in Grenoble in reflection as well as transmission geometry, respectively. The epitaxial films show a coexistence of the CuAu- and the chalcopyrite-phase with different lattice constants and tetragonal distortions. The volume fractions of both phases were determined. The lattice parameters for both substrate orientations are compared with values of single crystals and discrepancies and their implications for CIS thin film growth are discussed.

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