Dresden 2006 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 50: Poster II
HL 50.3: Poster
Donnerstag, 30. März 2006, 16:30–19:00, P3
Anisotropic Zeeman splitting of shallow impurities in Si/Ge double-barrier heterostructures — •Oleksiy B. Agafonov1, Kai-Martin Haendel1, Ulrich Denker2, Oliver G. Schmidt2, and Rolf J. Haug1 — 1Institut für Festkörperphysik, Universität Hannover, Appelstraße 2, D-30167 Hannover — 2Max-Plank-Institut für Festkörperforschung, Heisenbergstraße 1, D-70569 Stuttgart
We report the results of our experimental investigations of the Zeeman splitting of shallow impurities in Si/Ge double-barrier heterostructures [1]. The impurities are located in a strained Ge quantum well with a thickness of four monolayers. The splitting was measured as a function of angle between the magnetic field and the sample growth direction. A strong anisotropy of the heavy-hole g-factor was observed. A complete suppression of the splitting takes place when the magnetic field is oriented perpendicular to the sample growth direction, while in the parallel field the observed splitting is maximal.
[1] K.-M. Haendel, R. Winkler, U. Denker, O. G. Schmidt and R. J. Haug (2005), cond-mat/0510322.