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HL: Halbleiterphysik

HL 50: Poster II

HL 50.32: Poster

Thursday, March 30, 2006, 16:30–19:00, P3

Optically detected resonances in n-doped quantum wells and quantum dots — •Michael Gerbracht, A. A. Dremin, D. R. Yakovlev, and M. Bayer — Experimentelle Physik II, Universität Dortmund, D-44227 Dortmund, Germany

Optically detected resonance technique was used to study energy and spin structure of n-type doped quantum wells GaAs/(Al,Ga)As and CdTe/(Cd,Mg)Te and singly-charged (In,Ga)As/GaAs quantum dots. All samples have been fabricated by molecular beam epitaxy. The technique is based on the far-infrared laser (photon energies from 2.5 up to 20 meV) radiation effect on the electrons confined in the nanostructures. Detection is provided by means of intensity changes in photoluminescence lines of neutral and negatively charged excitons (trions). External magnetic fields up to 17 T were used to bring the system into resonance conditions. We have observed cyclotron resonances and resonances related to the internal energy structure of trion complexes. These experiments allow to study electron-exciton interaction and highlight processes of spin-dependent formation of trions.