Dresden 2006 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 50: Poster II
HL 50.41: Poster
Donnerstag, 30. März 2006, 16:30–19:00, P3
Silicon Thin Films Sensitized by Phthalocyanine Dyes — •Christian Kelting1, Ulrich Weiler2, Thomas Mayer2, Wolfram Jaegermann2, Dieter Wöhrle3, Marinus Kunst4, and Derck Schlettwein1 — 1Justus-Liebig-Universität Gießen, Institut für Angewandte Physik — 2TU Darmstadt, Fachbereich Materialforschung, Fachgebiet Oberflächenforschung — 3Universität Bremen, Institut für Organische und Makromolekulare Chemie — 4Hahn-Meitner-Institut, Sektion Solarenergie
A promising way to increase the light harvesting efficiency and hence the conversion efficiency of Si thin film photovoltaic cells is the utilization of the intense optical absorption of organic dye molecules in the absorber layer. Composite materials of zinc phthalocyanine (PcZn) in Si were prepared by simultaneous physical codeposition of PcZn into growing films of amorphous or microcrystalline Si from a plasma-enhanced (hot-wire) chemical deposition reaction (CVD). Thin films of PcZn (10 nm) were also prepared as model systems by physical vapour deposition on thin Si films (100-500 nm). Spectrally resolved photoconductivity measurements of pure Si films, PcZn- coated Si films and composite Si-Pc-films were used to prove the injection of charge carriers from the dye to silicon. The photoconductivity increased, in particular at the main absorption (Q-band) of the Pc. The sensitized photoconduction was obtained in the steady state under continuous illumination and the results are therefore taken as evidence for the injection of both types of charge carriers, electrons to the conduction band and holes to the valence band of Si.